Thin film multilayer capacitor and mounting method therefor

ABSTRACT

A thin film multilayer capacitor and a method for mounting it are provide wherein the capacitor is small and thin, can furnish a large capacitance, and is hard to be damaged at the time of mounting on a wiring substrate. The thin film multilayer capacitor  10  comprises a substrate  12  and a laminated body  14  formed thereon. The laminated body  14  is formed by laminating electrode layers  16  and dielectric layers  18 . The electrode layers  16  are divided into a first group of electrode layers  16   a  and a second group of electrode layers  16   b  by the dielectric layers  18 . The electrode layers  16   a  of the first group and the electrode layers  16   b  of the second group are laminated in an alternate manner with the dielectric layers  18  intervening therebetween, the plurality of electrode layers  16   a  of the first group are connected with each other, and the plurality of electrode layers  16   b  of the second group are also connected with each other. A protective film  20  is formed on the surrounding surfaces of the laminated body  14 , and solder bumps  24  are formed at the openings  22.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a thin film multilayer capacitor and amounting method therefor. More particularly, the present inventionrelates to a thin film multilayer capacitor which is small and has arelatively large capacitance, and a mounting method therefor.

2. Description of the Related Art

In recent years, in connection with the movement toward a circuit havinga higher density in the field of electronic parts, demand for furtherminiaturization and higher performance of a capacitor or the like hasbeen increased. As a small capacitor, a multilayer ceramic capacitor orthe like is known. A dielectric ceramic green sheet cut to a specifiedsize is prepared for fabricating such a multilayer ceramic capacitor.This ceramic green sheet is subjected to printing with an electrodepaste, is dried, is laminated, is compression-bonded and then is cutinto a specified size followed by baking in order to form a chip. Thechip is coated with an external electrode paste and then baked toproduce a multilayer ceramic capacitor.

However, if a multilayer ceramic capacitor is fabricated in such amethod, it is impossible to make dielectric layers thinner than theparticle size of a raw ceramic material powder. Besides, owing to theproblems of short circuits and disconnection at electrodes caused by thedefects of the dielectric layers, it is difficult, at the present levelof technology, to produce a capacitor that has dielectric layers with athickness of 3 μm or less. Thus, there has been a limit in realizing amultilayer ceramic capacitor having a smaller size and a largercapacitance.

In order to solve such problems, a multilayer ceramic capacitor isproposed in Japanese Unexamined Patent Application Publication56-144523, for example, in which a dielectric body portion is producedon a substrate by a sputtering method. A method for producing a thinfilm and electrode of Al₂O₃, SiO₂, TiO₂ or BaTiO₃ with a sputteringmethod is disclosed.

However, since materials such as Al₂O₃, SiO₂ and TiO₂ have smalldielectric constants, it is necessary to make the film thickness verysmall if the capacitance of a capacitor is to be increased, entailingproblems related to the reliability of electronic devices such as leakcurrent and dielectric breakdown voltage. Accordingly, use of a materialwith a high dielectric constant such as SrTiO₃(Ba,Sr)TiO₃, PbTiO₃,Pb(Zr,Ti)O₃ and Pb(Mg,Nb)O₃ as well as BaTiO₃ can be considered.However, when such a material with a high dielectric constant is used inorder to obtain a high dielectric constant in the state of a thin film,it is necessary to employ a deposition method such as a MOCVD method orthe like for improving the crystallinity of the thin film whendepositing the film at a high temperature, and since most of thesematerials having high dielectric constants are obtained by utilizing asolid sublimation technology, it is difficult to obtain a materialhaving a high dielectric constant with good reproducibility at the timeof lamination.

Furthermore, these thin films have a low mechanical strength. Thus, whena thin film multilayer capacitor that is a conventional multilayerceramic capacitor, in which ceramic green sheets are laminated, is usedas a chip part, there is a problem that it tends to be damaged. This isbecause it is necessary to move the capacitor while holding it by itsthin film side when the capacitor is to be bonded to a wiring substrateat the substrate side. To solve such a problem, it is conceivable toform solder bumps on the surface side of a thin film which is oppositeto the substrate side, and to move the thin film multilayer capacitorover to a wiring substrate while holding it by the substrate side, so asto mount it on the wiring substrate with the solder bumps.

However, in order to make progress in the movement towardminiaturization and height reduction of a thin film multilayercapacitor, it is necessary to make the substrate and the solder bumps asthin as possible, and in accordance with this, there is a possibility ofdamaging the substrate itself as a result of an external stress when thethin film multilayer capacitor contacts the wiring substrate in thecourse of the mounting. Furthermore, from the viewpoint of heightreduction, it is desirable to hold the thin film multilayer capacitorwhich is supported by solder bumps in a configuration approximatelyparallel with the wiring substrate.

SUMMARY OF THE INVENTION

Accordingly, it is one of the primary objects of the present inventionto provide a thin film multilayer capacitor that is small and thin, canprovide a large capacitance, and is hard to damage in the course ofmounting it on a wiring substrate.

Also, it is another object of the present invention to provide a thinfilm multilayer capacitor mounting method for mounting such a thin filmmultilayer capacitor on a wiring substrate.

The present invention is a thin film multilayer capacitor comprising asubstrate and a laminated body made of a plurality of dielectric layersand electrode layers formed on the substrate, wherein at least threesolder bumps for external connection are formed on the surface of thelaminated body which is opposite to the substrate side.

In such a thin film multilayer capacitor, the electrode layers comprisea first group of electrode layers and a second group of electrode layerswhich are electrically divided by the dielectric layers, wherein theelectrode layers of the first group are laminated with the electrodelayers of the second group in an alternate manner, having the dielectriclayers intervening therebetween, the dielectric layers being formedpartially over the electrode layers, so that a structure can be realizedin which the plurality of electrode layers of the first group areelectrically connected with each other at portions where the dielectriclayers are not formed, and the plurality of electrode layers of thesecond group are electrically connected with each other at the otherportions where the electrode layers are not formed.

Furthermore, a protective film having openings is formed on the surfaceof the laminated body so that solder bumps can be formed with solderapplied to connect to the electrode layers at the openings.

Furthermore, the dielectric layers are made of an oxide thin filmcomprising at least Ba or Sr which is preferably deposited by an MOCVDmethod using a dipivaloylmethanate complex adduct withtriethylenetetramine or tetraethylenepentamine as a raw material.

The present invention also includes a thin film multilayer capacitormounting method for mounting any of the thin film multilayer capacitorsdescribed above on a wiring substrate, wherein solder bumps areconnected to the wirings on the wiring substrate.

By forming at least three solder bumps on a laminated body made ofdielectric layers and electrode layers formed on a substrate, thesurface of the laminated body which is opposite to the substrate sidecan be attached onto a wiring substrate. Accordingly, a thin filmmultilayer capacitor can be moved to the wiring substrate while holdingit by the substrate side. Furthermore, by connecting at least threesolder bumps to wirings on the wiring substrate, it is possible to mounta thin film multilayer capacitor on the wiring substrate in a stateparallel with it, by which height reduction can be realized in themounting. Furthermore, since solder bumps make it possible to mount athin film multilayer capacitor on a wiring substrate in a state parallelwith it, the thin film multilayer capacitor can be prevented fromcontacting the wiring substrate, and, therefore, damage on the thin filmmultilayer capacitor by an external stress can be prevented.

Furthermore, the area in which the electrode layers of the first groupand the electrode layers of the second group face each other, is madelarger by laminating the electrode layers of the first group and theelectrode layers of the second group with dielectric layers interveningtherebetween, resulting in a capacitor with a large capacitance.

Furthermore, the laminated body can be protected by forming a protectivefilm, and by forming openings on the protective film, solder can beapplied onto the laminated body to form solder bumps. Hereupon, it ispreferable to form the openings and the solder bumps in a circular form,and it is desirable to strictly control the amount of solder for use inthe solder bumps.

Furthermore, the dielectric layers are made of a member comprising atleast Ba or Sr, and when deposition of the member is performed by aMOCVD method, using, as a raw material, a dipivaloylmethanate (DPM)complex adduct with triethylenetetramine or tetraethylenepentamine,M(DPM)₂(tetraene)₂ or M(DPM)₂(triene)₂; M=Ba, Sr, it can be used at atemperature not less than the melting temperature of the member, thusmaking it possible to vaporize it for conveyance, using a conventionalbubbling method. Accordingly, the reproducibility at the time ofdeposition of the dielectric body is improved, and lamination of thinfilms with a high dielectric constant is made possible.

Furthermore, by using solder bumps to mount such a thin film multilayercapacitor on a wiring substrate, it is possible to move the thin filmmultilayer capacitor while holding it by the substrate side. Therefore,damage to the thin film multilayer capacitor can be prevented.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is an illustrative cross-sectional view showing an example of thethin film multilayer capacitor according to the present invention;

FIG. 2 is an illustrative view showing an MOCVD apparatus forfabricating the thin film multilayer capacitor according to the presentinvention;

FIG. 3 is a view showing BST thin film patterns fabricated in theExample;

FIG. 4 is a view showing a Pt film pattern fabricated in the Example;

FIG. 5 is a view showing another Pt film pattern fabricated in theExample;

FIG. 6 is a view showing still another Pt film pattern fabricated in theExample;

FIG. 7 is a view showing a deposition pattern of the protective filmfabricated in the Example;

FIG. 8 is a plan view showing a wiring layer pattern on a wiringsubstrate on which the thin film multilayer capacitor fabricated in theExample is to be mounted; and

FIG. 9 is a front illustrative view showing the wiring substrate onwhich the thin film multilayer capacitor as shown in FIG. 8 is mounted.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

The above-described purposes, other purposes, features and advantages ofthe present invention will be made clearer by the following detaileddescription of the embodiments of the present invention with referenceto the drawings.

FIG. 1 is an illustrative cross-sectional view showing an example of thethin film multilayer capacitor according to the present invention. Athin film multilayer capacitor 10 comprises a substrate 12. An R-planesapphire substrate or the like is used for the substrate 12, forexample. A laminated body 14 is formed on the substrate 12. Thelaminated body 14 is formed by laminating electrode layers 16 anddielectric layers 18. Pt or the like is used for the electrode layers16, for example. The layers are formed by a sputtering method or thelike. Furthermore, as the dielectric layers 18, an oxide thin filmcomprising at least Ba or Sr is used. For example, (Ba,Sr)TiO₃ or thelike is used. These dielectric layers 18 are formed by an MOCVD methodor the like. The electrode layers 16 are formed with a first group of aplurality of electrode layers 16a and a second group of a plurality ofelectrode layers 16 b divided by the dielectric layers 18.

The electrode layers 16 a of the first group are formed on one side inthe lengthwise direction of the substrate 12, and the electrode layers16 b of the second group are formed on the other side in the lengthwisedirection of the substrate 12. The electrode layers 16 a of the firstgroup and the electrode layers 16 b of the second group are laminated inan alternate manner with the dielectric layers 18 interveningtherebetween at the center of the substrate 12. These electrode layers16 a of the first group and the electrode layers 16 b of the secondgroup are in a form of a plurality of layers by a sputtering method orthe like. Therefore, at the portions where the dielectric layers 18 arenot formed, the plurality of electrode layers 16 a of the first groupare electrically connected with each other, and the plurality ofelectrode layers 16 b of the second group are electrically connectedwith each other.

A protective film 20 is formed on the surrounding surfaces of thelaminated body 14. As the protective film 20, a silicon oxide film orthe like is used, for example. Such a film is formed by a plasma CVDmethod or the like. For example, four circular openings 22 are formed inthe protective film 20 on a surface side of the laminated body 14, thesurface side being opposite to the side of the substrate 12.

The first group of electrode layers 16 a and the second group ofelectrode layers 16 b are exposed by these openings 22, and solder bumps24 are formed by placing solder on these portions. It is preferable tostrictly control the amount of solder to be placed on the openings 22 ofthe protective film 20.

With this type of thin film multilayer capacitor 10, a very thinlaminated body 14 can be obtained by forming the electrode layers 16 andthe dielectric layers 18 by an MOCVD method, a sputtering method, or thelike. When a thin laminated body 14 such as this is formed, thesubstrate 12 can be made thinner, making it possible to fabricate a thinfilm multilayer capacitor 10 which is smaller and thinner as a whole.Even with such a thin film multilayer capacitor which is small and thinas this, by laminating the electrode layers 16 a of the first group andthe electrode layers 16 b of the second group in an alternate mannerwith the dielectric layers 18 intervening therebetween, the area inwhich these electrode layers face each other, is made larger, resultingin a capacitor with a larger capacitance.

Furthermore, a member comprising at least Ba or Sr is used infabricating dielectric layers 18. When a dipivaloylmethanate complexadduct with triethylenetetramine or tetraethylenepentamine is used as araw material, it can be used at a temperature not less than the meltingpoint of the member, thus making it possible to vaporize it forconveyance, using a conventional bubbling method. Accordingly, thereproducibility at the time of deposition of the dielectric body isimproved, and lamination of thin films with a high dielectric constantcan be made possible.

Furthermore, since solder bumps 24 are formed on the laminated body 14,it is possible to mount the thin film multilayer capacitor 10 on awiring substrate by connecting the solder bumps 24 to the wirings formedon the wiring substrate. Thus, it is possible to move the thin filmmultilayer capacitor 10 while holding it by the side of substrate 12 atthe time of mounting, preventing damage on the laminated body 14 duringthe movement. Since this way of movement while holding it by the side ofsubstrate 12 is made possible, automatic mounting is easily realized.

Furthermore, since four solder bumps 24 are formed, it is possible tomount the thin film multilayer capacitor 10 in a way that the thin filmmultilayer capacitor 10 is placed in a configuration parallel with thewiring substrate. Accordingly, height reduction can be realized when thethin film multilayer capacitor 10 is mounted. Furthermore, since it ispossible to place the thin film multilayer capacitor 10 in parallel withthe wiring substrate, it is possible to prevent the thin film multilayercapacitor 10 from contacting the wiring substrate, thus preventingdamage on the thin film multilayer capacitor 10 by an external stress.

EXAMPLES

An MOCVD apparatus 30 was prepared as shown in FIG. 2 for fabricating a(Ba,Sr)TiO₃ thin film (referred to as BST thin film, hereafter). TheMOCVD apparatus 30 includes three raw material containers 32, in whichmolten raw material liquids are filled. Into these raw materialcontainers 32, an Ar gas as a carrier gas is introduced via mass flowcontrollers 34. The evaporated molten raw material liquids aretransported by the carrier gas to a mixer 36 to be mixed. The rawmaterials thus mixed are sent to a deposition chamber 38. At that time,O₂ gas is also sent to the chamber 38 via a mass flow controller 40. Theinterior of the deposition chamber 38 is kept at a low pressure statewith a booster pump 42 and a rotary pump 44. A BST thin film is formedon a substrate 50 by bombarding the substrate 50 with the gas mixtureunder that condition. It is noted that the area enclosed by the dottedlines from the raw material containers 32 up to the deposition chamber38 is kept at a high temperature so that the raw materials are conveyedto the deposition chamber 38 while kept in a gas state.

An R-plane sapphire (Al₂O₃) substrate which is 0.1 mm in thickness and 2inches by 2 inches in size was prepared for forming a BST thin filmusing this MOCVD apparatus 30. BST thin films 52 having a pattern asshown in FIG. 3 were formed using a metal mask and under the conditionsdescribed in Table 1. The deposition time was 75 minutes and the filmthickness was 120 nm. It is noted that the dotted lines in FIG. 3indicate the sections to be cut, and the trimming allowance was 0.1 mm.It is also noted that the dimensions as shown in FIG. 3 through to FIG.7 are in mm units.

TABLE 1 Ba raw material Ba(DPM)₂(tetraene)₂ Temperature of the Baevaporator 120° C. Amount of the Ba evaporator carrier gas (Ar) 100ml/min flow Sr raw material Sr(DPM)₂(triene)₂ Temperature of the Srevaporator 110° C. Amount of the Sr evaporator carrier gas (Ar) flow 50ml/min Ti raw material Ti(O-i-C₃H₇)₄ Temperature of the Ti evaporator40° C. Amount of the Ti evaporator carrier gas (Ar) flow 25 ml/minAmount of the O₂ gas flow 700 ml/min Temperature of the evaporator 150°C. Deposition temperature 650° C. Pressure in the deposition chamber 1.3kPa Deposition time 75 min

To be noted is that a Pt film 54 was formed by a sputtering method witha pattern as shown in FIG. 4, before performing deposition of the BSTthin film 52. The dimensions indicated in FIG. 4 through to FIG. 7conform to those obtained after performing the cutting along thesections to be cut as shown by the dotted lines in FIG. 3. An RFsputtering device was used for the Pt film deposition. The depositiontime was 100 seconds and the film thickness was about 150 nm.

TABLE 2 Pressure before deposition 6.7 × 10⁻⁴ Pa Pressure at deposition0.67 Pa Ar flow amount 10 ml/min RF power 250 W Deposition temperature70° C.

By forming a Pt film 54 with a pattern as shown in FIG. 4 on a substrate50, and forming a BST thin film 52 with a pattern as shown in FIG. 3thereover, a state is realized in which the Pt film 54 is exposed fromthe BST thin film 52 only at one side in the lengthwise direction of thesubstrate 50 after cutting. In this state, Pt films 56 a and 56 b wereformed with a pattern as shown in FIG. 5 and under the conditionsdescribed in Table 2. The deposition time was 80 seconds. The filmthickness was adjusted to be 120 nm, similar to that of the BST thinfilm 52. Therefore, the Pt films 54 and 56 a were connected electricallywith each other at one end side in the lengthwise direction of thesubstrate 50.

Next, a Pt film 58 with a pattern as shown in FIG. 6 was formed underthe conditions described in Table 2. The deposition time was 90 seconds.Therefore, the Pt films 56 b and 58 were connected electrically witheach other at the other side in the lengthwise direction of thesubstrate 50 after cutting. Then, a BST thin film 52 was formed over itto have a pattern as shown in FIG. 3. Therefore, a state was realized inwhich the Pt film 56 a was exposed from the BST thin film 52 at one sidein the lengthwise direction of the substrate 50, and the Pt film 58 wasexposed from the BST thin film 52 at the other side. Furthermore, a BSTthin film 52 on a lower layer was connected to a BST thin film 52 on itsupper layer at the end portion of the Pt film 58 which is at one side inthe lengthwise direction of the substrate 50.

As described above, over the substrate 50, a Pt film 54, a BST thin film52, Pt films 56 a and 56 b, a Pt film 58, a BST thin film 52 . . . , aBST thin film 52, Pt films 56 a and 56 b, are sequentially formed, and aPt film 54 or a Pt film 58 was formed at the end. A thin film laminatedbody having 15 layers of BST thin films 52 was thus fabricated. The thinfilm laminated body thus obtained was treated at 650° C. in an oxygenatmosphere for three hours. Next, a silicon oxide film was deposited asa protective film, using a plasma CVD method and under the conditionsdescribed in Table 3, in order to cover the whole surfaces of thedielectric layers and the electrode layers.

TABLE 3 Si raw material TEOS(Si(OC₂H₅)₄) TEOS flow amount 100 ml/min O₂gas flow amount 5,000 ml/min Substrate temperature 350° C. Chamberpressure 667 Pa Film thickness 200 nm

Furthermore, a resist having four openings 60 was formed as shown inFIG. 7, the silicon oxide film at the openings was removed by iontrimming, and cutting was performed along the dotted lines as shown inFIG. 3. After that, solder was placed on the parts where the siliconoxide film was removed to form solder bumps. As a result, 3,735 piecesof thin film multilayer capacitors having a structure as shown in FIG. 1could be fabricated.

Next, a wiring substrate 72 having wiring layer pieces 70 metallizedthereon as shown in FIG. 8 was prepared. On this wiring substrate 72,the wiring layer pieces 70 were formed at a distance from each other sothat they correspond to the locations of the solder bumps of the thinfilm multilayer capacitor. Accordingly, the thin film multilayercapacitor was connected to the wiring layer pieces 70 by solderreflowing as shown in FIG. 9. In this way, 100 pieces of thin filmmultilayer capacitors were connected to the wiring substrate 72, andwere subjected to measurement of capacitance and tan δ at 1 kHz. Theresults are shown in Table 4.

TABLE 4 Capacitance Average value 0.11 μF CV value 2.5% tan δ Averagevalue 1.5% CV value 2.2% Short circuit rate 3%

As is understood from Table 4, a capacitance of 0.1 μF or more wasobtained with the thin film multilayer capacitor having 15 layers of BSTthin film. Furthermore, the relative dielectric constant of the BST thinfilms calculated from this characteristic value is 600 or more,indicating that BST thin films having a high dielectric constant wereobtained with a good reproducibility.

Furthermore, the height of this thin film multilayer capacitor connectedto the wiring substrate is about 0.12 mm, providing a capacitor which isvery low in height. If one layer of this BST thin film is added to thethin film multilayer capacitor, it results in an increase of only 270 nmin thickness. Therefore, a thin film multilayer capacitor having alarger capacitance can be obtained by increasing the number of thelaminated layers.

According to the present invention, it is possible to obtain a thin filmmultilayer capacitor which is small, thin, and of a large capacitance.Furthermore, when this thin film multilayer capacitor is mounted on awiring substrate, it is possible to move the capacitor over to thewiring substrate while holding it by the substrate side so that damageon the thin film multilayer capacitor is prevented at the time ofmovement. Furthermore, it is possible to mount the thin film multilayercapacitor without contacting the wiring substrate and keeping it in aconfiguration parallel with the wiring substrate, so that damages on thethin film multilayer capacitor by an external stress can be prevented.

What is claimed is:
 1. A thin film multilayer capacitor comprising: asubstrate and a laminated body comprising a plurality of dielectriclayers and electrode layers on said substrate; the laminated body havinga substrate side and a surface side opposite the substrate side; whereinthere are at least three solder bumps adapted for external connection onthe surface side of said laminated body; wherein said electrode layerscomprise a plurality of first electrode layers and a plurality of secondelectrode layers which are electrically isolated by said dielectriclayers, a first electrode layer being laminated with a second electrodelayer in an alternate manner with a dielectric layer lying therebetweenand partially covering said first and second electrode layers so thatsaid plurality of first electrode layers are electrically connected witheach other at portions where said dielectric layers are not present, andsaid plurality of second electrode layers are electrically connectedwith each other at the other portions where said dielectric layers arenot present; further comprising a protective film which has openings onthe surface side of said laminated body, and wherein each of said solderbumps electrically connect to an electrode layer at said openings.
 2. Athin film multilayer capacitor according to claim 1, wherein saiddielectric layers comprise a MOCVD oxide thin film comprising at leastone of Ba and Sr.
 3. A thin film multilayer capacitor according to claim2, wherein said MOCVD oxide thin film is made from a dipivaloylmethanatecomplex adduct with a triethylenetetramine or tetraethylenepentamine rawmaterial.
 4. A thin film multilayer capacitor mounting comprising a thinfilm multilayer capacitor according to claim 3 and a wiring substratehaving wirings, wherein said solder bumps are electrically connected towirings on said wiring substrate.
 5. A thin film multilayer capacitormounting comprising a thin film multilayer capacitor according to claim2 and a wiring substrate having wirings, wherein said solder bumps areelectrically connected to wirings on said wiring substrate.
 6. A thinfilm multilayer capacitor mounting comprising a thin film multilayercapacitor according to claim 1 and a wiring substrate having wirings,wherein said solder bumps are electrically connected to wirings on saidwiring substrate.
 7. A method of making a thin film multilayer capacitormounting comprising providing a thin film multilayer capacitor accordingto claim 1 and a wiring substrate having wirings, positioning saidsolder bumps so that they can be electrically connected to wirings onsaid wiring substrate, and electrically connecting said solder bumps tosaid wirings.
 8. A thin film multilayer capacitor comprising: asubstrate and a laminated body comprising a plurality of dielectriclayers and electrode layers on said substrate; the laminated body havinga substrate side and a surface side opposite the substrate side; whereinthere are at least three solder bumps adapted for external connection onthe surface side of said laminated body; further comprising a protectivefilm which has openings on the surface side of said laminated body, andwherein each of said solder bumps electrically connect to an electrodelayer at said openings.
 9. A thin film multilayer capacitor according toclaim 8, wherein said electrode layers comprise a plurality of firstelectrode layers and a plurality of second electrode layers which areelectrically isolated by said dielectric layers, a first electrode layerbeing laminated with a second electrode layer in an alternate mannerwith a dielectric layer lying therebetween and partially covering saidfirst and second electrode layers so that said plurality of firstelectrode layers are electrically connected with each other at portionswhere said dielectric layers are not present, and said plurality ofsecond electrode layers are electrically connected with each other atthe other portions where said dielectric layers are not present.
 10. Athin film multilayer capacitor according to claim 8, wherein saiddielectric layers comprise a MOCVD oxide thin film comprising at leastone of Ba and Sr.
 11. A thin film multilayer capacitor according toclaim 10, wherein said MOCVD oxide thin film is made from adipivaloylmethanate complex adduct with a triethylenetetramine ortetraethylenepentamine raw material.
 12. A thin film multilayercapacitor mounting comprising a thin film multilayer capacitor accordingto claim 11 and a wiring substrate having wirings, wherein said solderbumps are electrically connected to wirings on said wiring substrate.13. A thin film multilayer capacitor mounting comprising a thin filmmultilayer capacitor according to claim 10 and a wiring substrate havingwirings, wherein said solder bumps are electrically connected to wiringson said wiring substrate.
 14. A thin film multilayer capacitor mountingcomprising a thin film multilayer capacitor according to claim 8 and awiring substrate having wirings, wherein said solder bumps areelectrically connected to wirings on said wiring substrate.
 15. A thinfilm multilayer capacitor mounting comprising a thin film multilayercapacitor according to claim 9 and a wiring substrate having wirings,wherein said solder bumps are electrically connected to wirings on saidwiring substrate.
 16. A thin film multilayer capacitor mountingcomprising a thin film multilayer capacitor according to claim 8 and awiring substrate having wirings, wherein said solder bumps areelectrically connected to wirings on said wiring substrate.
 17. A methodof making a thin film multilayer capacitor mounting comprising providinga thin film multilayer capacitor according to claim 8 and a wiringsubstrate having wirings, positioning said solder bumps so that they canbe electrically connected to wirings on said wiring substrate, andelectrically connecting said solder bumps to said wirings.
 18. A methodof making a thin film multilayer capacitor mounting comprising providinga thin film multilayer capacitor according to claim 9 and a wiringsubstrate having wirings, positioning said solder bumps so that they canbe electrically connected to wirings on said wiring substrate, andelectrically connecting said solder bumps to said wirings.
 19. A methodof making a thin film multilayer capacitor mounting comprising providinga thin film multilayer capacitor according to claim 8 and a wiringsubstrate having wirings, positioning said solder bumps so that they canbe electrically connected to wirings on said wiring substrate, andelectrically connecting said solder bumps to said wirings.